Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. (2023)

First Author: Chen C
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.100607

Publication URI: https://www.repository.cam.ac.uk/handle/1810/355750

Type: Journal Article/Review