Lateral 1200v Sic Schottky Barrier Diode with Single Event Burnout Tolerance (2024)

First Author: Qi Y

Attributed to: Silicon Carbide Power Conversion for Telecommunications Satellite Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.2139/ssrn.4733583

Publication URI: http://dx.doi.org/10.2139/ssrn.4733583

Type: Preprint