A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors. (2020)

First Author: Senanayak S

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.57352

Publication URI: https://www.repository.cam.ac.uk/handle/1810/310263

Type: Journal Article/Review