Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2 V-1 s-1. (2010)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/adma.201000195

PubMed Identifier: 20665561

Publication URI: http://europepmc.org/abstract/MED/20665561

Type: Journal Article/Review

Volume: 22

Parent Publication: Advanced materials (Deerfield Beach, Fla.)

Issue: 32

ISSN: 0935-9648