Molecular beam epitaxy of GaN 1- x Bi x alloys with high bismuth content (2012)
Attributed to:
Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201100312
Publication URI: http://dx.doi.org/10.1002/pssa.201100312
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 3