Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability (2012)
Attributed to:
Development of an integrated optical E-Probe for GaN power transistor reliability analysis
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201228395
Publication URI: http://dx.doi.org/10.1002/pssa.201228395
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 12