Plasma-assisted electroepitaxy of GaN layers (2013)
Attributed to:
Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201200595
Publication URI: http://dx.doi.org/10.1002/pssc.201200595
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 3