Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode (2006)
Attributed to:
Power Electronics for Adverse High Temperature Environments (PEATE)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.apsusc.2005.09.026
Publication URI: http://dx.doi.org/10.1016/j.apsusc.2005.09.026
Type: Journal Article/Review
Parent Publication: Applied Surface Science
Issue: 11