Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals (2011)
Attributed to:
Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.125
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.125
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 1