Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt (2012)
Attributed to:
Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2012.05.040
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2012.05.040
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 1