Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layers (2013)
Attributed to:
Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2012.12.160
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2012.12.160
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth