High quality relaxed Ge layers grown directly on a Si(001) substrate (2011)

First Author: Shah V

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2011.03.005

Publication URI: http://dx.doi.org/10.1016/j.sse.2011.03.005

Type: Journal Article/Review

Parent Publication: Solid-State Electronics

Issue: 1