Dilute nitride vertical-cavity gate for all-optical logic at 1.3 µm (2010)
Attributed to:
Electrically Pumped Broad Band and Vertical Cavity Semiconductor Dilute Nitride Amplifiers for Metro and Acess Networks
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1049/iet-opt.2009.0078
Publication URI: http://dx.doi.org/10.1049/iet-opt.2009.0078
Type: Journal Article/Review
Parent Publication: IET Optoelectronics
Issue: 5