Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks (2007)

First Author: Coleman P
Attributed to:  Technologies for SiC electronics and sensors in extreme environments funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2752129

Publication URI: http://dx.doi.org/10.1063/1.2752129

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 1