Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers (2008)
Attributed to:
Growth of thick and flat high quality GaN using nano-column compliant layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2899944
Publication URI: http://dx.doi.org/10.1063/1.2899944
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 12