The influence of size distribution on the luminescence decay from excited states of InAs/GaAs self-assembled quantum dots (2009)

First Author: Harbord E
Attributed to:  Strain engineered InAs/GaAs quantum dots for long wavelength emission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3073934

Publication URI: http://dx.doi.org/10.1063/1.3073934

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 3