Highly mismatched crystalline and amorphous GaN1-xAsx alloys in the whole composition range (2009)

First Author: Yu K

Attributed to: Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3259434

Publication URI: http://dx.doi.org/10.1063/1.3259434

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 10