The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices (2010)

First Author: Naidu D
Attributed to:  Platform Renewal - Optical gain and recombination in structured materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3471812

Publication URI: http://dx.doi.org/10.1063/1.3471812

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 4