Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes (2010)
Attributed to:
Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3488819
Publication URI: http://dx.doi.org/10.1063/1.3488819
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 11