Low gap amorphous GaN1-xAsx alloys grown on glass substrate (2010)
Attributed to:
Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3488826
Publication URI: http://dx.doi.org/10.1063/1.3488826
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 10