High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates (2011)

First Author: Zhylik A

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3597828

Publication URI: http://dx.doi.org/10.1063/1.3597828

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 12