High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation (2013)

First Author: Huy Nguyen V

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4825130

Publication URI: http://dx.doi.org/10.1063/1.4825130

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 15