Defect identification in strained Si/SiGe heterolayers for device applications (2009)
Attributed to:
Nanometre Strain Evaluation for Future and Emerging Technologies
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/42/17/175306
Publication URI: http://dx.doi.org/10.1088/0022-3727/42/17/175306
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 17