Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature (2010)
Attributed to:
Renaissance Germanium
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/25/8/085007
Publication URI: http://dx.doi.org/10.1088/0268-1242/25/8/085007
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 8