The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates (2013)
Attributed to:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/28/9/094010
Publication URI: http://dx.doi.org/10.1088/0268-1242/28/9/094010
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 9