Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. (2012)
Attributed to:
Creating Silicon Based Platforms for New Technologies
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1468-6996/13/5/055002
PubMed Identifier: 27877523
Publication URI: http://europepmc.org/abstract/MED/27877523
Type: Journal Article/Review
Volume: 13
Parent Publication: Science and technology of advanced materials
Issue: 5
ISSN: 1468-6996