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TEM analysis of Ge-on-Si MOSFET structures with HfO 2 dielectric for high performance PMOS device technology (2010)

First Author: Norris D

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1742-6596/209/1/012061

Publication URI: http://dx.doi.org/10.1088/1742-6596/209/1/012061

Type: Journal Article/Review

Parent Publication: Journal of Physics: Conference Series