A Theoretical Comparison of the Breakdown Behavior of $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ and InP Near-Infrared Single-Photon Avalanche Photodiodes (2009)
Attributed to:
Novel InGaAs/InAlAs travelling wave avalanche photodiode for ultra high speed photonic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jqe.2009.2013094
Publication URI: http://dx.doi.org/10.1109/jqe.2009.2013094
Type: Journal Article/Review
Parent Publication: IEEE Journal of Quantum Electronics
Issue: 5