Temperature-Dependent Threshold Current in InP Quantum-Dot Lasers (2011)

First Author: Smowton P
Attributed to:  InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jstqe.2011.2115235

Publication URI: http://dx.doi.org/10.1109/jstqe.2011.2115235

Type: Journal Article/Review

Parent Publication: IEEE Journal of Selected Topics in Quantum Electronics

Issue: 5