Impact of STI on Statistical Variability and Reliability of Decananometer MOSFETs (2011)
Attributed to:
ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2011.2108256
Publication URI: http://dx.doi.org/10.1109/led.2011.2108256
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 4