Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET (2010)
Attributed to:
ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2010.2052694
Publication URI: http://dx.doi.org/10.1109/ted.2010.2052694
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 9