Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature (2012)

First Author: Riddet C

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2012.2194498

Publication URI: http://dx.doi.org/10.1109/ted.2012.2194498

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 7