Leakage current and charge trapping behavior in TiO2/SiO2 high-? gate dielectric stack on 4H-SiC substrate (2007)

First Author: Mahapatra R
Attributed to:  Technologies for SiC electronics and sensors in extreme environments funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.2433976

Publication URI: http://dx.doi.org/10.1116/1.2433976

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Issue: 1