Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates (2010)
Attributed to:
Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/1.3276426
Publication URI: http://dx.doi.org/10.1116/1.3276426
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Issue: 3