Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production (2010)

First Author: Novikov S

Attributed to: Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting funded by EPSRC

No abstract provided

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Issue: 3