Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity (2011)
Attributed to:
UK Silicon Photonics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/1.3530594
Publication URI: http://dx.doi.org/10.1116/1.3530594
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Issue: 1