Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process (2012)

First Author: Dobbie A
Attributed to:  Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1143/apex.5.071301

Publication URI: http://dx.doi.org/10.1143/apex.5.071301

Type: Journal Article/Review

Parent Publication: Applied Physics Express

Issue: 7