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High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO 2 Gate Dielectric (2011)

First Author: Mitard J

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1143/jjap.50.04dc17

Publication URI: http://dx.doi.org/10.1143/jjap.50.04dc17

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 4S