High Quality Strained Ge Epilayers on a Si[sub 0.2]Ge[sub 0.8]/Ge/Si(100) Global Strain-Tuning Platform (2010)

First Author: Myronov M

Attributed to: UK Silicon Photonics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1149/1.3482159

Publication URI: http://dx.doi.org/10.1149/1.3482159

Type: Journal Article/Review

Parent Publication: Electrochemical and Solid-State Letters

Issue: 11