Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal-Insulator-Metal Devices (2012)
Attributed to:
Technologies for SiC electronics and sensors in extreme environments
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1007/s11664-012-1912-1
Publication URI: http://dx.doi.org/10.1007/s11664-012-1912-1
Type: Journal Article/Review
Parent Publication: Journal of Electronic Materials
Issue: 4