Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well (2014)

First Author: Hassan A
Attributed to:  Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4870392

Publication URI: http://dx.doi.org/10.1063/1.4870392

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 13