Weak antilocalization of high mobility holes in a strained germanium quantum well heterostructure. (2015)
Attributed to:
Spintronic device physics in Si/Ge Heterostructures.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0953-8984/27/2/022201
PubMed Identifier: 25469938
Publication URI: http://europepmc.org/abstract/MED/25469938
Type: Journal Article/Review
Volume: 27
Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal
Issue: 2
ISSN: 0953-8984