1.52 [micro sign]m electroluminescence from GaAs-based quantum dot bilayers (2011)

First Author: Majid M
Attributed to:  Strain engineered InAs/GaAs quantum dots for long wavelength emission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/el.2010.3203

Publication URI: http://dx.doi.org/10.1049/el.2010.3203

Type: Journal Article/Review

Parent Publication: Electronics Letters

Issue: 1