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1.52 µm electroluminescence from GaAs-based quantum dot bilayers (2011)

First Author: Majid M

Attributed to: Strain engineered InAs/GaAs quantum dots for long wavelength emission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/el.2010.3203

Publication URI: http://dx.doi.org/10.1049/el.2010.3203

Type: Journal Article/Review

Parent Publication: Electronics Letters

Issue: 1