6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers (2009)

First Author: Nick Wright (Author)
Attributed to:  Technologies for SiC electronics and sensors in extreme environments funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Type: Conference/Paper/Proceeding/Abstract