"Growth by Molecular Beam Epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production" (2009)

First Author: N/a Novikov

Attributed to: Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting funded by EPSRC

No abstract provided

Type: Conference/Paper/Proceeding/Abstract