AMORPHOUS CHALCOGENIDE-BASED OPTOELECTRONIC PLATFORM FOR NEXT-GENERATION OPTOELECTRONIC TECHNOLOGIES
Lead Research Organisation:
University of Cambridge
Department Name: Chemistry
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
People |
ORCID iD |
Stephen Elliott (Principal Investigator) |
Publications
Fedorenko Y
(2015)
Electrical properties of Bi-implanted amorphous chalcogenide films
in Thin Solid Films
Fedorenko Y
(2015)
Electrical properties of Bi-implanted amorphous chalcogenide films
Fedorenko Y
(2014)
Electrical properties of Bi-implanted amorphous chalcogenide films
Hughes M
(2014)
Ion-implantation-enhanced chalcogenide-glass resistive-switching devices
in Applied Physics Letters
Hughes MA
(2014)
n-type chalcogenides by ion implantation.
in Nature communications
Hughes MA
(2013)
On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses.
in Optics express
Lee TH
(2017)
The Relation between Chemical Bonding and Ultrafast Crystal Growth.
in Advanced materials (Deerfield Beach, Fla.)
Lee TH
(2015)
Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials.
in Advanced materials (Deerfield Beach, Fla.)
Lee TH
(2014)
Tailoring transient-amorphous states: towards fast and power-efficient phase-change memory and neuromorphic computing.
in Advanced materials (Deerfield Beach, Fla.)
Description | We have discovered that, using ion implantation, one can change the electronic charge-carrier type in amorphous chalcogenide materials, thereby opening the possibility of making p-n junction-based devices from such materials |
Exploitation Route | We are about to submit a new grant application to EPSRC to continue the work carried out in this 2-year project |
Sectors | Electronics |
Description | Findings have informed academic knowledge |
First Year Of Impact | 2012 |
Sector | Electronics |
Impact Types | Societal |
Title | Research data supporting "The relation between chemical bonding and ultra-fast crystal growth" |
Description | This document explains the key data contained in this repository for the following manuscript: The relation between chemical bonding and ultrafast crystal growth by T. H. Lee and S. R. Elliott General: We include here the atomic coordinates of generated amorphous GST model. In addition, we include the atomic coordinates of models captured at certain frames during growth simulations (i.e. the initial and final configurations during sequential cooperative atomic movements, as shown in Fig. 5a). The data for the distribution of atomic distance and ELFbond for axial and equatorial bonds of Ge(4,1) and Sb(4,1) units are also included here. Data files: 1. Amorphous_model.cif This file contains the atomic coordinates of amorphous GST model generated (Fig. 1a). The file can be viewed by, for instance, VESTA (http://jp-minerals.org/vesta/en/). 2. Atom_ligand_distance_Ge41_axial_equatorial.txt The first, second, and third columns correspond to the bond distance in Å, the number of axial bonds, and the number of equatorial bonds, respectively, for Ge(4,1) units observed in amorphous models (Fig. 2d). 3. Atom_ligand_distance_Sb41_axial_equatorial.txt The first, second, and third columns correspond to the bond distance in Å, the number of axial bonds, and the number of equatorial bonds, respectively, for Sb(4,1) units observed in amorphous models (Fig. 2d). 4. ELF_Ge41_axial_equatorial.txt The first, second, and third columns correspond to the ELEbond, equatorial-bond populations, and the population of axial bonds, respectively, for Ge(4,1) units observed in amorphous models (Fig. 3a). 5. ELF_Sb41_axial_equatorial.txt The first, second, and third columns correspond to the ELEbond, the population of equatorial bonds, and the population of axial bonds, respectively, for Sb(4,1) units observed in amorphous models (Fig. 3a). 6. Atomic_configuration_growth.cif This file contains the atomic coordinates of GST model during crystal growth. The file can be viewed by, for instance, VESTA (http://jp-minerals.org/vesta/en/). |
Type Of Material | Database/Collection of data |
Year Produced | 2017 |
Provided To Others? | Yes |