The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS

Lead Research Organisation: CARDIFF UNIVERSITY
Department Name: School of Physics and Astronomy

Abstract

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Publications

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Bagheri M (2016) Threshold Voltage Compensation Error in Voltage Programmed AMOLED Displays in Journal of Display Technology

 
Description We have demonstrated a powerful laser photoconductive spectroscopic technique for the characterisation of sub-bandgap defects in active AOS TFT devices. The technique allows identification of sub-bandgap defects through their spectral signature (wavelength/energy). The enhancement in photon flux over a spectrally filtered broadband source results in an increased dynamic range, allowing below band-gap absorption coefficients to be measured in a range that covers six orders of magnitude. The sensitivity of the technique can be further improved by tuning the applied bias gate voltage. Our technique has the further advantage that changes in defect density can be monitored during TFT device fabrication, which might help researchers optimise the overall process.
Exploitation Route Our findings allow researchers to optimise the fabrication of AOS devices. They allow researchers to understand how the defects evolve over time during device operation.
Sectors Aerospace, Defence and Marine,Digital/Communication/Information Technologies (including Software),Electronics,Energy

 
Description Please see the impact description provided for EP/M013650/1
Sector Aerospace, Defence and Marine,Digital/Communication/Information Technologies (including Software),Electronics
 
Description Knowledge Transfer Partnership
Amount £101,539 (GBP)
Funding ID KTP010131 
Organisation Innovate UK 
Sector Public
Country United Kingdom
Start 04/2016 
End 04/2018