Development of site-controlled III-Nitride Quantum Dots

Lead Research Organisation: University of Bath
Department Name: Electronic and Electrical Engineering

Abstract

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Planned Impact

The Institute of Physics has estimated that physics-dependent businesses directly contribute 8.5% to the UK's economic output, employ more than a million people and generated exports amounting to more than £100bn in 2009. They go on to say: "It is important for businesses to have access to a range of highly skilled (and motivated) individuals capable of thinking 'outside of the box', particularly physics-trained postgraduates due to the highly numerate, analytical and problemsolving skills that are acquired during their training." If funded, the graduates of this CDT will have such skills and motivation. We would hope that this would significantly contribute towards satisfying the UK's need for trained scientists, particularly in the field of condensed matter physics. The impact would go further than this. By working more closely with industry and other partner organisations, we would reshape the conventional PhD programme to improve the experience for all.

In addition to the training aspect of the CDT there would be an important research impact. The Universities of Bristol and Bath have many world-leading researchers across the condensed matter field. By working with the high-quality students that we hope to recruit into the programme we will produce significant cutting edge research in condensed matter. The research would bear on some of the grand challenges facing condensed matter physics such as: understanding the emergence of new phenomena far from equilibrium; the nanoscale design of functional materials such as graphene; and harnessing quantum Physics for new technologies. Ultimately, this would contribute to improvements in many technologies, for example, energy or data storage technology.

Publications

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Studentship Projects

Project Reference Relationship Related To Start End Student Name
NE/W503022/1 31/03/2021 30/03/2022
1972678 Studentship NE/W503022/1 30/09/2017 31/12/2021 Robert Armstrong
 
Description Demonstration and presentation of Displacement Talbot Lithography for the creation of III-N nanostructures
Research involving AlN nanostructures combining top down dry etching and single crystal regrowth. This includes explaination of the mechanisms dictating the shape of the nanostructures.
Exploitation Route Further development of Displacement Talbot Lithography
Further understanding and development of uniform, periodic AlN nanostructures.
Sectors Digital/Communication/Information Technologies (including Software)

Electronics

Energy