Bound states within the notch of the HfO2/GeO2/Ge stack (2013)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/1.4794378
Publication URI: http://dx.doi.org/10.1116/1.4794378
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Issue: 2