Exciton confinement in narrow non-polar InGaN/GaN quantum wells grown on r -plane sapphire (2012)
Attributed to:
Science Bridge Award USA: Harnessing Materials for Energy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201100479
Publication URI: http://dx.doi.org/10.1002/pssb.201100479
Type: Journal Article/Review
Parent Publication: physica status solidi (b)
Issue: 3